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Title: Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases

A study of scattering mechanisms in gate tunable two dimensional electron gases confined to InAs/(Al,Ga)Sb heterostructures with varying interface roughness and dislocation density is presented. By integrating an insulated gate structure the evolution of the low temperature electron mobility and single-particle lifetime was determined for a previously unexplored density regime, 10{sup 11}–10{sup 12 }cm{sup −2}, in this system. Existing theoretical models were used to analyze the density dependence of the electron mobility and single particle lifetime in InAs quantum wells. Scattering was found to be dominated by charged dislocations and interface roughness. It was demonstrated that the growth of InAs quantum wells on nearly lattice matched GaSb substrate results in fewer dislocations, lower interface roughness, and improved low temperature transport properties compared to growth on lattice mismatched GaAs substrates.
Authors:
 [1] ; ;  [2] ;  [3] ;  [1] ;  [4] ;  [4]
  1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
  2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
  3. California NanoSystems Institute, University of California, Santa Barbara, California 93106 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22423738
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER LIFETIME; DISLOCATIONS; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; QUANTUM WELLS; SCATTERING