Weak ferromagnetism and temperature dependent dielectric properties of Zn{sub 0.9}Ni{sub 0.1}O diluted magnetic semiconductor

Journal Article · Sun Mar 15 00:00:00 EDT 2015 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2014.11.039· OSTI ID:22420824

Ahmed, Raju ^[1]; Moslehuddin, A. S.M.; Mahmood, Zahid Hasan ^[2]; Hossain, A. K.M. Akther, ^[3]

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1. Department of Electrical and Electronic Engineering, Shahjalal University of Science and Technology, Sylhet 3114 (Bangladesh)
2. Department of Applied Physics, Electronics and Communication Engineering, University of Dhaka, Dhaka 1000 (Bangladesh)
3. Department of Physics, Bangladesh University of Engineering and Technology, Dhaka 1000 (Bangladesh)

Highlights: • Single phase wurtzite structure was confirmed from XRD analysis. • Weak ferromagnetic behaviour at room temperature. • Pure semiconducting properties confirmed from temperature dependent conductivity. • Smaller dielectric properties at higher frequency. • Possible potential application in high frequency spintronic devices. - Abstract: In this study the room temperature ferromagnetic behaviour and dielectric properties of ZnO based diluted magnetic semiconductor (DMS) have been investigated using nominal chemical composition Zn{sub 0.9}Ni{sub 0.1}O. The X-ray diffraction analysis confirmed formation of single phase hexagonal wurtzite structure. An increase in grain size with increasing sintering temperature was observed from scanning electron microscopy. Field dependent DC magnetization values indicated dominant paramagnetic ordering along with a slight ferromagnetic behaviour at room temperature. Frequency dependent complex initial permeability showed some positive values around 12 at room temperature. In dielectric measurement, an increasing trend of complex permittivity, loss tangent and ac conductivity with increasing temperature were observed. The temperature dependent dispersion curves of dielectric properties revealed clear relaxation at higher temperature. Frequency dependent ac conductivity was found to increase with frequency whereas complex permittivity and loss tangent showed an opposite trend.

• OSTI ID: 22420824
• Journal Information: Materials Research Bulletin, Vol. 63; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
FERROMAGNETISM
FREQUENCY DEPENDENCE
GRAIN SIZE
MAGNETIC PROPERTIES
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
PARAMAGNETISM
PERMITTIVITY
RELAXATION LOSSES
SCANNING ELECTRON MICROSCOPY
SINTERING
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
ZINC OXIDES