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Title: Thickness and UV irradiation effects on the gas sensing properties of Te thin films

Highlights: • Tellurium thin films were prepared by thermal evaporation technique. • Tellurium thin films showed excellent gas-sensing properties to H{sub 2}S at room temperature. • Tellurium showed a remarkably enhanced response to H{sub 2}S gas under UV irradiation. • The reason of the enhanced response by UV irradiation was discussed. - Abstract: In this research, tellurium thin films were investigated for use as hydrogen sulfide gas sensors. To this end, a tellurium thin film has been deposited on Al{sub 2}O{sub 3} substrates by thermal evaporation, and the influence of thickness on the sensitivity of the tellurium thin film for measuring H{sub 2}S gas is studied. XRD patterns indicate that as the thickness increases, the crystallization improves. Observing the images obtained by SEM, it is seen that the grain size increases as the thickness increases. Studying the effect of thickness on H{sub 2}S gas measurement, it became obvious that as the thickness increases, the sensitivity decreases and the response and recovery times increase. To improve the response and recovery times of the tellurium thin film for measuring H{sub 2}S gas, the influence of UV radiation while measuring H{sub 2}S gas was also investigated. The results indicate that the response andmore » recovery times strongly decrease using UV radiation.« less
Authors:
 [1] ;  [2] ;  [1]
  1. Department of Plasma Physics, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)
  2. Nuclear Science and Technology Research Institute, P.O. Box 31485-498, Karaj (Iran, Islamic Republic of)
Publication Date:
OSTI Identifier:
22420812
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 62; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CRYSTALLIZATION; ELECTRICAL PROPERTIES; EVAPORATION; GAS ANALYSIS; GRAIN SIZE; HYDROGEN SULFIDES; IRRADIATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SUBSTRATES; TELLURIUM; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ULTRAVIOLET RADIATION; X-RAY DIFFRACTION