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Title: The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode

The Co/n-GaP nano-Schottky diodes have been fabricated to investigate effect of annealing temperature on the characteristics of the device. DC Magnetron sputtering technique has been used for Co metallic contact. The samples have been annealed for three minutes at 400 °C and 600 °C. XRD analyzes of the devices subjected to thermal annealing process have been investigated. Surface images have been taken with atomic force microscopy (AFM) in order to examine the morphology of the surface of the metal layer before and after the annealing the sample. The current–voltage (I–V) measurements taken at room temperature have shown that the ideality factor and series resistance decrease with the increasing annealing temperature. The ideality factor was found to be 1.02 for sample annealed at 400 °C. Before and after annealing, depending on the temperature measurement, the capacitance–frequency (C–f), and conductance–frequency (G–f) have been measured, and graphs have been plotted.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. Vocational School of Health Services, Bingöl University, 12000 Bingöl (Turkey)
  2. Vocational School of Technical Sciences, Bingöl University, 12000 Bingöl (Turkey)
  3. Department of Physics, Kazim Karabekir Education Faculty, Atatürk University, Erzurum 25240 (Turkey)
  4. Faculty of Science, Department of Chemistry, 25240 Erzurum (Turkey)
  5. Faculty of Sciences, Department of Engineering Physics, Istanbul Medeniyet University, 34730 Istanbul (Turkey)
Publication Date:
OSTI Identifier:
22420780
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 61; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ATOMIC FORCE MICROSCOPY; CAPACITANCE; COBALT; ELECTRIC CONDUCTIVITY; GALLIUM PHOSPHIDES; LAYERS; MORPHOLOGY; NANOSTRUCTURES; SCHOTTKY BARRIER DIODES; SPUTTERING; SURFACES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION