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Title: Synthesis, microstructure, and electronic band structure properties of nanocrystalline neodymium-doped bismuth titanate ferroelectric films fabricated by the sol–gel method

Graphical abstract: X-ray diffraction indicates that the films are polycrystalline with the pure perovskite phase. Ten Raman active modes and one silicon substrate mode can be observed. The A{sub 1} {sub g}[Bi] at about 59 cm{sup −1} is unchanged whereas the B{sub 1} {sub g} and A{sub 1} {sub g}[Ti] phonon modes shift towards higher frequencies. Photoluminescence shows that the intensities of the two peaks increase with Nd concentration except the Bi{sub 3}NdTi{sub 3}O{sub 12} film, due to the smallest grain size and oxygen vacancy defects. Good optical functions of the BNT films are achieved due to the SE suggesting potential applications in ferroelectric-based optoelectronic devices. - Abstract: Bi{sub 4−x}Nd{sub x}Ti{sub 3}O{sub 12} (BNT) films with different Nd contents (from 0 to 1 with 0.25 intervals) are prepared by the sol–gel process. The Nd substitution effects on the preferred orientation, surface morphology, phonon modes, emission bands, andelectronic band structures of the BNT films are investigated by microscopy, Raman scattering, photoluminescence, and spectroscopic ellipsometry (SE) at room temperature. X-ray diffraction indicates that the films are polycrystalline with the pure perovskite phase. Ten Raman active modes and one silicon substrate mode can be observed. The A{sub 1} {sub g}[Bi] at about 59more » cm{sup −1} is unchanged whereas the B{sub 1} {sub g} and A{sub 1} {sub g}[Ti] phonon modes shift towards higher frequencies. Photoluminescence shows that the intensities of the two peaks increase with Nd concentration except the Bi{sub 3}NdTi{sub 3}O{sub 12} film, due to the smallest grain size and oxygen vacancy defects. Good optical functions of the BNT films are achieved due to the SE suggesting potential applications in ferroelectric-based optoelectronic devices.« less
Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [4]
  1. College of Communications and Electronics Engineering, Qiqihar University, Heilongjiang 161006 (China)
  2. (China)
  3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
  4. Department of Physics and Material Sciences, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)
Publication Date:
OSTI Identifier:
22420763
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 61; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH COMPOUNDS; CONCENTRATION RATIO; ELECTRICAL PROPERTIES; ELLIPSOMETRY; EMISSION SPECTROSCOPY; FERROELECTRIC MATERIALS; GRAIN ORIENTATION; GRAIN SIZE; NANOSTRUCTURES; NEODYMIUM COMPOUNDS; OPTOELECTRONIC DEVICES; PHONONS; PHOTOLUMINESCENCE; POLYCRYSTALS; RAMAN SPECTROSCOPY; THIN FILMS; TITANATES; VACANCIES; X-RAY DIFFRACTION