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Title: CVD growth of graphene under exfoliated hexagonal boron nitride for vertical hybrid structures

Graphical abstract: We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO2, show the carrier mobility up to approximately 2250 cm{sup 2} V{sup −1} s{sup −1}. The developed method would enable the exploration of the possibility of novel hybrid structure integration with two-dimensional material systems. - Abstract: We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO{sub 2}, show the carrier mobility up to approximately 2250 cm{sup 2} V{sup −1} s{sup −1}. The developed method would enable the exploration of the possibilitymore » of novel hybrid structure integration with two-dimensional material systems.« less
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [3] ;  [1] ;  [2] ;  [3]
  1. SKKU Advanced Institute of Nanotechnology (SAINT) (Korea, Republic of)
  2. (HINT) (Korea, Republic of)
  3. (SKKU), Suwon 440-746 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22420762
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 61; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON NITRIDES; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRIC CONDUCTIVITY; ETCHING; FILMS; GRAPHENE; HEXAGONAL LATTICES; INTERFACES; NANOSTRUCTURES; RAMAN SPECTROSCOPY; SILICON OXIDES; SURFACES; TWO-DIMENSIONAL SYSTEMS