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Title: Control of ferromagnetism in (In{sub 0.9}Fe{sub 0.1}){sub 2}O{sub 3} via F doping of electron carriers

Highlights: • F doping was achieved by a process of low temperature reaction with PVDF. • RTFM was obtained in the F-doped (In{sub 0.9}Fe{sub 0.1}){sub 2}O{sub 3.} • Magnetism and electric resistivity can be controlled by the content of doped F. • The FM can be ascribed to a long range exchange interaction induced by carriers. - Abstract: Ferromagnetism in (In{sub 0.9}Fe{sub 0.1}){sub 2}O{sub 3} was obtained by fluorine (F) doping. The ferromagnetism can be controlled by changing the electron carrier concentration via F doping. With increasing the F concentration, the electron carrier concentration increases, and samples undergo a paramagnetic insulator to ferromagnetic metal transition. For the ferromagnetic samples, the anomalous Hall effect (AHE) was observed. These results indicate that electron carriers play an important role in inducing the ferromagnetism.
Authors:
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Publication Date:
OSTI Identifier:
22420747
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 61; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONS; EXCHANGE INTERACTIONS; FERROMAGNETISM; FLUORINE; HALL EFFECT; INDIUM COMPOUNDS; IRON OXIDES; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; ORGANIC FLUORINE COMPOUNDS; PARAMAGNETISM; POLYVINYLS; X-RAY DIFFRACTION