Control of ferromagnetism in (In{sub 0.9}Fe{sub 0.1}){sub 2}O{sub 3} via F doping of electron carriers
Highlights: • F doping was achieved by a process of low temperature reaction with PVDF. • RTFM was obtained in the F-doped (In{sub 0.9}Fe{sub 0.1}){sub 2}O{sub 3.} • Magnetism and electric resistivity can be controlled by the content of doped F. • The FM can be ascribed to a long range exchange interaction induced by carriers. - Abstract: Ferromagnetism in (In{sub 0.9}Fe{sub 0.1}){sub 2}O{sub 3} was obtained by fluorine (F) doping. The ferromagnetism can be controlled by changing the electron carrier concentration via F doping. With increasing the F concentration, the electron carrier concentration increases, and samples undergo a paramagnetic insulator to ferromagnetic metal transition. For the ferromagnetic samples, the anomalous Hall effect (AHE) was observed. These results indicate that electron carriers play an important role in inducing the ferromagnetism.
- OSTI ID:
- 22420747
- Journal Information:
- Materials Research Bulletin, Vol. 61; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CHARGE CARRIERS
CONCENTRATION RATIO
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRONS
EXCHANGE INTERACTIONS
FERROMAGNETISM
FLUORINE
HALL EFFECT
INDIUM COMPOUNDS
IRON OXIDES
MAGNETIC MATERIALS
MAGNETIC PROPERTIES
ORGANIC FLUORINE COMPOUNDS
PARAMAGNETISM
POLYVINYLS
X-RAY DIFFRACTION