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Title: Microstructure and dielectric properties of BaTiO{sub 3} ceramic doped with yttrium, magnesium, gallium and silicon for AC capacitor application

Graphical abstract: Core–shell structure can be obtained in BaTiO{sub 3} ceramics co-doped with Y–Mg-Ga-Si. Y-Mg-Ga-Si co-dopant can obviously reduce dielectric loss, improve AC breakdown voltage and flatten temperature dependence of capacitance curve. - Highlights: • Y-Mg-Ga-Si co-doped BaTiO{sub 3} ceramics with core-shell structure were prepared. • Y{sup 3+}, Mg{sup 2+}, and Ga{sup 3+} dissolved in the lattice BaTiO{sub 3} replacing Ba{sup 2+} site or Ti{sup 4+} site. • Y{sup 3+} and Ga{sup 3+} tended to remain close to the grain boundaries as a shell maker. • Y-Mg-Ga-Si co-doped BaTiO{sub 3} ceramics show high AC breakdown voltage and low tanδ. - Abstract: The microstructures and dielectric properties of Y-Mg-Ga-Si co-doped barium titanate ceramics were investigated. Y{sup 3+} dissolved in the lattice of BaTiO{sub 3} replacing both Ba{sup 2+} site and Ti{sup 4+} site, and Mg{sup 2+} replaced Ti{sup 4+} site. The replacements of Y{sup 3+} and Mg{sup 2+} inhibit the grain growth, cause tetragonal-to-pseudocubic phase transition, reduce the dielectric loss, and flatten the temperature dependence of capacitance curve. The incorporation of Ga{sup 3+} can improve sintering and increase permittivity. Y{sup 3+} and Ga{sup 3+} tended to remain close to the grain boundaries, and play an important role as a shell makermore » in the formation of the core–shell structure in the co-doped BaTiO{sub 3} ceramics. Excellent dielectric properties: ϵ{sub r} = ∼2487, tanδ = ∼0.7% (at 1 kHz), ΔC/C{sub 25} < ∼6.56% (from −55 °C to 125 °C) and alternating current breakdown voltage E < ∼4.02 kV/mm can be achieved in the BaTiO{sub 3}–0.02Y{sub 2}O{sub 3}–0.03MgO–0.01Ga{sub 2}O{sub 3}–0.005SiO{sub 2} ceramics sintered at 1380 °C. This material has a potential application in alternating current multilayer ceramic capacitor.« less
Authors:
 [1] ;  [1] ;  [2] ;  [1] ; ;  [3] ; ;  [1]
  1. Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
  2. (China)
  3. Fujian Torch Electron Technology Co., Ltd., Quanzhou 362000, ChinaChina (China)
Publication Date:
OSTI Identifier:
22420691
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 60; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BARIUM COMPOUNDS; BARIUM IONS; CERAMICS; DIELECTRIC MATERIALS; DOPED MATERIALS; ELECTRON MICROSCOPY; GALLIUM; GALLIUM IONS; GRAIN BOUNDARIES; MAGNESIUM; PERMITTIVITY; PHASE TRANSFORMATIONS; SILICON; SINTERING; TEMPERATURE DEPENDENCE; TITANATES; TITANIUM IONS; X-RAY DIFFRACTION; YTTRIUM; YTTRIUM IONS