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Title: Forced diffusion via electrically induced crystallization for fabricating ZnO–Ti–Si structures

Highlights: • ZnO–Ti–Si system is very important for the structural design. • The electrically induced crystallization method is useful to diffusion process. • Intermetallic compound characteristics have been presented using electrically induced crystallization. • Interface mechanism about diffusion of TZO–TiSi{sub x}–Si structure is presented. - Abstract: Electrically induced crystallization (EIC) is a recently developed process for material modification. This study is applied to EIC to fabricate ZnO–Ti–Si multi-layer structures of various thicknesses to dope Ti into ZnO thin film and to form TiSi{sub x} intermetallic compound (IMC) in a single step. The IMC layer was confirmed using transmission electron microscopy images. The Ti layer thickness was more than 40 nm, which enhanced electron transmission and decreased the total electrical resistance in the structure. Finally, the diffusion mechanisms of EIC and the annealing process were investigated. This study shows that the EIC process has potential for industrial applications.
Authors:
;
Publication Date:
OSTI Identifier:
22420642
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 59; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CRYSTAL GROWTH; CRYSTALLIZATION; DIFFUSION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONS; INTERFACES; INTERMETALLIC COMPOUNDS; LAYERS; SILICON; SUBSTRATES; THIN FILMS; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDES