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Title: Influence of molybdenum source/drain electrode contact resistance in amorphous zinc–tin-oxide (a-ZTO) thin film transistors

Highlights: • We developed and investigated source/drain electrodes in oxide TFTs. • The Mo S/D electrodes showed good output characteristics. • Intrinsic TFT parameters were calculated by the transmission line method. - Abstract: This paper investigates the feasibility of a low-resistivity electrode material (Mo) for source/drain (S/D) electrodes in thin film transistors (TFTs). The effective resistances between Mo source/drain electrodes and amorphous zinc–tin-oxide (a-ZTO) thin film transistors were studied. Intrinsic TFT parameters were calculated by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low source/drain voltage. The TFTs fabricated with Mo source/drain electrodes showed good transfer characteristics with a field-effect mobility of 10.23 cm{sup 2}/V s. In spite of slight current crowding effects, the Mo source/drain electrodes showed good output characteristics with a steep rise in the low drain-to-source voltage (V{sub DS}) region.
Authors:
; ;  [1] ;  [2] ;  [2]
  1. Department of Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, Seoul 133-791 (Korea, Republic of)
  2. Department of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-ku, Seoul 133-791 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22420588
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 58; Conference: IFFM2013: International forum on functional materials, Jeju City (Korea, Republic of), 27-29 Jun 2013; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; MOLYBDENUM; SEMICONDUCTOR MATERIALS; SPUTTERING; THIN FILMS; TIN OXIDES; TRANSISTORS; ZINC COMPOUNDS