skip to main content

SciTech ConnectSciTech Connect

Title: Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

Highlights: • Intensified visible light irradiation was generated via a high-powered Xe arc lamp. • The disordered Si atomic structure absorbs the intensified visible light. • The rapid heating activates electrically boron-implanted Si thin films. • Flash lamp heating is applicable to low temperature polycrystalline Si thin films. - Abstract: Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.
Authors:
 [1] ;  [2] ; ; ;  [1] ;  [3] ;  [2] ;  [1]
  1. Department of Materials Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of)
  2. Department of Mechanical and Systems Design Engineering, Hongik University, Seoul 121-791 (Korea, Republic of)
  3. Viatron Technologies, Kyeonggi-Do 441-811 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22420587
Resource Type:
Journal Article
Resource Relation:
Journal Name: Materials Research Bulletin; Journal Volume: 58; Conference: IFFM2013: International forum on functional materials, Jeju City (Korea, Republic of), 27-29 Jun 2013; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; BORON; BORON IONS; GLASS; HALL EFFECT; ION IMPLANTATION; IRRADIATION; LIGHT BULBS; POLYCRYSTALS; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; VISIBLE RADIATION