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Title: Optical and field emission properties of layer-structure GaN nanowires

Abstract

Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.

Authors:
 [1];  [1]; ;  [1]
  1. Science School, Xi’an University of Technology, Xi’an 710048 (China)
Publication Date:
OSTI Identifier:
22420530
Resource Type:
Journal Article
Journal Name:
Materials Research Bulletin
Additional Journal Information:
Journal Volume: 56; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRON EMISSION; EMISSION SPECTRA; FIELD EMISSION; FILMS; GALLIUM NITRIDES; LAYERS; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TRANSMISSION ELECTRON MICROSCOPY; VISIBLE RADIATION; X-RAY DIFFRACTION

Citation Formats

Cui, Zhen, School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, Li, Enling, Shi, Wei, and Ma, Deming. Optical and field emission properties of layer-structure GaN nanowires. United States: N. p., 2014. Web. doi:10.1016/J.MATERRESBULL.2014.04.014.
Cui, Zhen, School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, Li, Enling, Shi, Wei, & Ma, Deming. Optical and field emission properties of layer-structure GaN nanowires. United States. https://doi.org/10.1016/J.MATERRESBULL.2014.04.014
Cui, Zhen, School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048, Li, Enling, Shi, Wei, and Ma, Deming. 2014. "Optical and field emission properties of layer-structure GaN nanowires". United States. https://doi.org/10.1016/J.MATERRESBULL.2014.04.014.
@article{osti_22420530,
title = {Optical and field emission properties of layer-structure GaN nanowires},
author = {Cui, Zhen and School of automation and Information Engineering, Xi’an University of Technology, Xi’an 710048 and Li, Enling and Shi, Wei and Ma, Deming},
abstractNote = {Highlights: • The layer-structure GaN nanowires with hexagonal-shaped cross-sections are produced via a process based on the CVD method. • The diameter of the layer-structure GaN nanowire gradually decreases from ∼500 nm to ∼200 nm along the wire axis. • The layer-structure GaN nanowire film possesses good field emission property. - Abstract: A layer-structure gallium nitride (GaN) nanowires, grown on Pt-coated n-type Si (1 1 1) substrate, have been synthesized using chemical vapor deposition (CVD). The results show: (1) SEM indicates that the geometry structure is layer-structure. HRTEM indicates that GaN nanowire’s preferential growth direction is along [0 0 1] direction. (2) The room temperature PL emission spectrum of the layer-structure GaN nanowires has a peak at 375 nm, which proves that GaN nanowires have potential application in light-emitting nano-devices. (3) Field-emission measurements show that the layer-structure GaN nanowires film has a low turn-on field of 4.39 V/μm (at room temperature), which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The growth mechanism for GaN nanowires has also been discussed briefly.},
doi = {10.1016/J.MATERRESBULL.2014.04.014},
url = {https://www.osti.gov/biblio/22420530}, journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 56,
place = {United States},
year = {Fri Aug 15 00:00:00 EDT 2014},
month = {Fri Aug 15 00:00:00 EDT 2014}
}