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Title: Amorphous ZnAlSnO thin-film transistors by a combustion solution process for future displays

A combustion solution method was developed to fabricate amorphous ZnAlSnO (a-ZATO) for thin-film transistors (TFTs). The properties of a-ZATO films and behaviors of a-ZATO TFTs were studied in detail. An appropriate Al content in the matrix could suppress the formation of oxygen vacancies efficiently and achieve densely amorphous films. The a-ZATO TFTs exhibited acceptable performances, with an on/off current ratio of ∼10{sup 6}, field-effect mobility of 2.33 cm{sup 2}·V{sup −1}·S{sup −1}, threshold voltage of 2.39 V, and subthreshold swing of 0.52 V/decade at an optimal Al content (0.5). The relation between on- and off-resistance of the ZATO TFT was also within the range expected for fast switching devices. More importantly, the introduced Al with an appropriate content had the ability to evidently enhance the device long-term stability under working bias stress and storage durations. The obtained indium- and gallium-free a-ZATO TFTs are very promising for the next-generation displays.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)
  2. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072 (China)
Publication Date:
OSTI Identifier:
22420277
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; AMORPHOUS STATE; GALLIUM; INDIUM; OXYGEN; THIN FILMS; TIN OXIDES; TRANSISTORS; VACANCIES; ZINC COMPOUNDS