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Title: Electron velocity of 6 × 10{sup 7 }cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors

A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In{sub 0.17}Al{sub 0.83}N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor (Fin-HEMT) with significantly enhanced device performance was achieved that is promising for high-speed device applications. The Fin-HEMT with 200-nm effective fin-width (W{sub eff}) exhibited a very high I{sub Dmax} of 3940 mA/mm and a highest g{sub m} of 1417 mS/mm. This dramatic increase of I{sub D} and g{sub m} in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT translated to an extracted highest electron velocity (v{sub e}) of 6.0 × 10{sup 7 }cm/s, which is ∼1.89× higher than that of the conventional In{sub 0.17}Al{sub 0.83}N/GaN HEMT (3.17 × 10{sup 7 }cm/s). The v{sub e} in the conventional III-nitride transistors are typically limited by highly efficient optical-phonon emission. However, the unusually high v{sub e} at 300 K in the 3D TT-gate In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMT is attributed to the increase of in-plane tensile stress component by SiN passivation in the formed NC which is also verified by micro-photoluminescence (0.47 ± 0.02 GPa) and micro-Raman spectroscopy (0.39 ± 0.12 GPa) measurements. The ability to reach the v{sub e} = 6 × 10{sup 7 }cm/s at 300 K by a stress engineered 3D TT-gate lattice-matched In{sub 0.17}Al{sub 0.83}N/GaN NC Fin-HEMTs shows they are promising for next-generation ultra-scaled high-speed device applications.
Authors:
; ; ;  [1] ;  [2] ; ;  [3] ; ;  [4]
  1. Temasek Laboratories@NTU, Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553 (Singapore)
  2. School of Electrical and Electronics Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
  3. Electrical and Computer Engineering Department, The Ohio State University, Columbus, Ohio 43210 (United States)
  4. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), 3 Research Link, Singapore 117602 (Singapore)
Publication Date:
OSTI Identifier:
22420276
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ALLOYS; ELECTRON MOBILITY; GALLIUM NITRIDES; INDIUM ALLOYS; PASSIVATION; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICON NITRIDES; TEMPERATURE RANGE 0273-0400 K; THREE-DIMENSIONAL CALCULATIONS; TRANSISTORS