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Title: Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor

Back-action in the readout of quantum bits is an area that requires a great deal of attention in electron spin based-quantum bit architecture. We report here back-action measurements in a silicon device with quantum dots and a single-electron transistor (SET) charge sensor. We observe the back-action-induced excitation of electrons from the ground state to an excited state in a quantum dot. Our measurements and theoretical fitting to the data reveal conditions under which both suitable SET charge sensor sensitivity for qubit readout and low back-action-induced transition rates (less than 1 kHz) can be achieved.
Authors:
;  [1] ;  [1] ;  [2] ;  [2]
  1. Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22420274
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONS; EXCITATION; EXCITED STATES; QUANTUM DOTS; QUBITS; READOUT SYSTEMS; SENSORS; SILICON; TRANSISTORS