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Title: Hysteresis-free high-temperature precise bimorph actuators produced by direct bonding of lithium niobate wafers

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4907679· OSTI ID:22420272
; ; ; ; ;  [1]
  1. Ferroelectric Laboratory, Institute of Natural Sciences, Ural Federal University, 51 Lenin Ave., 620000 Ekaterinburg (Russian Federation)

The current paper presents a piezoelectric bimorph actuator produced by direct bonding of lithium niobate wafers with the mirrored Y and Z axes. Direct bonding technology allowed to fabricate bidomain plate with precise positioning of ideally flat domain boundary. By optimizing the cutting angle (128° Y-cut), the piezoelectric constant became as large as 27.3 pC/N. Investigation of voltage dependence of bending displacement confirmed that bimorph actuator has excellent linearity and hysteresis-free. Decrease of the applied voltage down to mV range showed the perfect linearity up to the sub-nm deflection amplitude. The frequency and temperature dependences of electromechanical transmission coefficient in wide temperature range (from 300 to 900 K) were investigated.

OSTI ID:
22420272
Journal Information:
Applied Physics Letters, Vol. 106, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English