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Title: Thickness dependent quantum oscillations of transport properties in topological insulator Bi{sub 2}Te{sub 3} thin films

The dependences of the electrical conductivity, the Hall coefficient, and the Seebeck coefficient on the layer thickness d (d = 18−600 nm) of p-type topological insulator Bi{sub 2}Te{sub 3} thin films grown by thermal evaporation in vacuum on glass substrates were obtained at room temperature. In the thickness range of d = 18–100 nm, sustained oscillations with a substantial amplitude were revealed. The observed oscillations are well approximated by a harmonic function with a period Δd = (9.5 ± 0.5) nm. At d > 100 nm, the transport coefficients practically do not change as d is increased. The oscillations of the kinetic properties are attributed to the quantum size effects due to the hole confinement in the Bi{sub 2}Te{sub 3} quantum wells. The results of the theoretical calculations of Δd within the framework of a model of an infinitely deep potential well are in good agreement with the experimental results. It is suggested that the substantial amplitude of the oscillations and their sustained character as a function of d are connected with the topologically protected gapless surface states of Bi{sub 2}Te{sub 3} and are inherent to topological insulators.
Authors:
; ; ;  [1] ;  [2]
  1. National Technical University “Kharkov Polytechnic Institute,” 21 Frunze St., Kharkov 61002 (Ukraine)
  2. Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)
Publication Date:
OSTI Identifier:
22420262
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BISMUTH TELLURIDES; ELECTRIC CONDUCTIVITY; GLASS; QUANTUM WELLS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS