Electrical and terahertz magnetospectroscopy studies of laser-patterned micro- and nanostructures on InAs-based heterostructures

Journal Article · Mon Feb 02 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4907571· OSTI ID:22420249

Buchholz, S. S.; Fischer, S. F. ^[1]; Heyn, Ch.; Hansen, W. ^[2]; Pakmehr, M.; McCombe, B. D. ^[3]

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1. Novel Materials Group, Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin (Germany)
2. Institut für Angewandte Physik, Universität Hamburg, 20148 Hamburg (Germany)
3. Department of Physics, University at Buffalo, The State University of New York, Buffalo, New York 14260 (United States)

Nanostructures fabricated from narrow-gap semiconductors with strong spin-orbit interaction (SOI), such as InAs, can be used to filter momentum modes of electrons and offer the possibility to create and detect spin-polarized currents entirely by electric fields. Here, we present magnetotransport and THz magnetospectroscopy investigations of Hall-bars with back-gates made from in InGaAs/InAlAs quantum well structures with a strained 4 nm InAs-inserted channel. The two-dimensional electron gas is at 53 nm depth and has a carrier density of about 6 × 10{sup 11 }cm{sup −2} and mobility of about 2 × 10{sup 5} cm{sup 2}/Vs, after illumination. Electrical and THz optical transport measurements at low temperatures and in high magnetic fields reveal an effective mass of 0.038m{sub 0} and an anisotropic g-factor of up to 20, larger than for bulk InAs or InAs-based heterostructures. We demonstrate that quasi-one-dimensional channels can be formed by micro-laser lithography. The population of subbands is controlled by in-plane gates. Contrary to previous reports, symmetric and asymmetric in-plane gate voltages applied to quasi-one dimensional channels did not show indications of SOI-induced anomalies in the conductance.

• OSTI ID: 22420249
• Journal Information: Applied Physics Letters, Vol. 106, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER DENSITY
ELECTRIC FIELDS
ELECTRON GAS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASERS
L-S COUPLING
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SPIN ORIENTATION
THZ RANGE
TWO-DIMENSIONAL SYSTEMS