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Title: Highly crystalline MoS{sub 2} thin films grown by pulsed laser deposition

Highly crystalline thin films of MoS{sub 2} were prepared over large area by pulsed laser deposition down to a single monolayer on Al{sub 2}O{sub 3} (0001), GaN (0001), and SiC-6H (0001) substrates. X-ray diffraction and selected area electron diffraction studies show that the films are quasi-epitaxial with good out-of-plane texture. In addition, the thin films were observed to be highly crystalline with rocking curve full width half maxima of 0.01°, smooth with a RMS roughness of 0.27 nm, and uniform in thickness based on Raman spectroscopy. From transport measurements, the as-grown films were found to be p-type.
Authors:
; ; ; ;  [1] ; ; ;  [2] ; ;  [3]
  1. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
  2. Department of Material Science and Engineering, University of California, Berkeley, California 94720 (United States)
  3. Department of Chemical and Biomolecular Engineering, University of California, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22420248
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; DOPED MATERIALS; ELECTRON DIFFRACTION; ENERGY BEAM DEPOSITION; GALLIUM NITRIDES; HYDROGEN; LASER RADIATION; MOLYBDENUM SULFIDES; NEUTRON DIFFRACTION; PULSED IRRADIATION; RAMAN SPECTROSCOPY; SILICON CARBIDES; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION