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Title: Temperature dependence of Brillouin light scattering spectra of acoustic phonons in silicon

Electrons, optical phonons, and acoustic phonons are often driven out of local equilibrium in electronic devices or during laser-material interaction processes. The need for a better understanding of such non-equilibrium transport processes has motivated the development of Raman spectroscopy as a local temperature sensor of optical phonons and intermediate frequency acoustic phonons, whereas Brillouin light scattering (BLS) has recently been explored as a temperature sensor of low-frequency acoustic phonons. Here, we report the measured BLS spectra of silicon at different temperatures. The origins of the observed temperature dependence of the BLS peak position, linewidth, and intensity are examined in order to evaluate their potential use as temperature sensors for acoustic phonons.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [3] ;  [1] ;  [3]
  1. Department of Physics, Center of Complex Quantum Systems, The University of Texas at Austin, Austin, Texas 78712 (United States)
  2. Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712 (United States)
  3. (United States)
  4. Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)
  5. Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States)
Publication Date:
OSTI Identifier:
22420246
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONS; LIGHT SCATTERING; PHONONS; RAMAN SPECTROSCOPY; SENSORS; SILICON; TEMPERATURE DEPENDENCE