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Title: Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography

High resolution scanning transmission electron microscopy and atom probe tomography experiments reveal the presence of an intermediate layer at the interface between two binary compounds with no common atom, namely, ZnTe and CdSe for samples grown by Molecular Beam Epitaxy under standard conditions. This thin transition layer, of the order of 1 to 3 atomic planes, contains typically one monolayer of ZnSe. Even if it occurs at each interface, the direct interface, i.e., ZnTe on CdSe, is sharper than the reverse one, where the ZnSe layer is likely surrounded by alloyed layers. On the other hand, a CdTe-like interface was never observed. This interface knowledge is crucial to properly design superlattices for optoelectronic applications and to master band-gap engineering.
Authors:
; ; ;  [1] ;  [2] ; ; ; ;  [1] ;  [2] ;  [1] ;  [2]
  1. Université Grenoble Alpes, F-38000 Grenoble (France)
  2. (France)
Publication Date:
OSTI Identifier:
22420244
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOYS; CADMIUM SELENIDES; CADMIUM TELLURIDES; ELECTRONIC STRUCTURE; LAYERS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SUPERLATTICES; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; ZINC SELENIDES; ZINC TELLURIDES