skip to main content

Title: Interface/border trap characterization of Al{sub 2}O{sub 3}/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

We report the interface characterization of Al{sub 2}O{sub 3}/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial layer (AlN) is formed at the Al{sub 2}O{sub 3}/GaN to effectively block oxygen from the GaN surface and prevent the formation of detrimental Ga-O bonds. The suppression of Ga-O bonds is validated by X-ray photoelectron spectroscopy of the critical interface. Frequency-dispersion in C-V characteristics has been significantly reduced, owing to improved interface quality. Furthermore, using the conventional conductance method suitable for extracting the interface trap density D{sub it} in MOS structures, D{sub it} in the device with AlN was determined to be in the range of 10{sup 11}–10{sup 12 }eV{sup −1 }cm{sup −2}, showing one order of magnitude lower than that without AlN. Border traps near the gate-dielectric/GaN interface were identified and shown to be suppressed by the AlN interfacial layer as well.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)
  2. Institute of Microelectronics, Peking University, Beijing 100871 (China)
  3. School of Physics, Peking University, Beijing 100871 (China)
Publication Date:
OSTI Identifier:
22420241
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDES; INTERFACES; LAYERS; METALS; OXYGEN; SEMICONDUCTOR MATERIALS; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY