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Title: Growth-induced electron mobility enhancement at the LaAlO{sub 3}/SrTiO{sub 3} interface

We have studied the electronic properties of the 2D electron liquid present at the LaAlO{sub 3}/SrTiO{sub 3} interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility (≈10 000 cm{sup 2} V{sup −1} s{sup −1}) and the lowest sheet carrier density (≈5×10{sup 12} cm{sup −2}). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800–900 °C) display carrier densities in the range of ≈2−5×10{sup 13} cm{sup −2} and mobilities of ≈1000 cm{sup 2} V{sup −1} s{sup −1} at 4 K. Reducing their carrier density by field effect to 8×10{sup 12} cm{sup −2} lowers their mobilities to ≈50 cm{sup 2} V{sup −1} s{sup −1} bringing the conductance to the weak-localization regime.
Authors:
; ; ; ; ; ;  [1]
  1. Department of Quantum Matter Physics, Université de Genève, 24 Quai Ernest-Ansermet, 1211 Genève 4 (Switzerland)
Publication Date:
OSTI Identifier:
22420240
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINATES; CARRIER DENSITY; ELECTRON MOBILITY; INTERFACES; LANTHANUM COMPOUNDS; MAGNETORESISTANCE; STRONTIUM TITANATES; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K