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Title: High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecture offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering, Zhejiang University, Hangzhou 310027 (China)
  2. Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA (United Kingdom)
Publication Date:
OSTI Identifier:
22420235
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC CONTACTS; ELECTROLUMINESCENCE; GALLIUM NITRIDES; LIGHT EMITTING DIODES; NANOWIRES; QUANTUM EFFICIENCY; SILVER; SIMULATION; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; ULTRAVIOLET RADIATION