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Title: The effects of tungsten concentration on crystalline structure and perpendicular magnetic anisotropy of Co-W films

In this study, Co-W thin films deposited by DC magnetron sputtering were demonstrated to be perpendicular magnetic anisotropic with large magnetocrystalline anisotropy energy (MAE). Thermodynamic calculations based on Miedema’s semi-empirical model have been used to estimate the phase in this binary alloy system. Based on the thermodynamic calculations results, a series of Co-W thin films were deposited on amorphous Ta underlayer with different tungsten concentrations. According to the X-ray diffraction results, the crystal structure of Co-W thin films is consistent well with that of thermodynamic calculations. Large MAE of Co-W thin films can be obtained with K{sub u} over 2.1 × 10{sup 5} J/m{sup 3} after vacuum annealing. The perpendicular coercivity (H{sub c}) of Co-W thin film reaches 9.1 × 10{sup 4} A/m. Therefore, the Co-W thin film is considered as a potential choice of high-density magnetic recording media materials.
Authors:
 [1] ;  [2] ; ; ;  [1] ; ;  [3]
  1. State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)
  2. (MINT), University of Minnesota, Minneapolis, MN 55455 (United States)
  3. Department of Electrical and Computer Engineering and the Center for Micromagnetics and Information Technologies (MINT), University of Minnesota, Minneapolis, MN 55455 (United States)
Publication Date:
OSTI Identifier:
22420228
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; ANNEALING; BINARY ALLOY SYSTEMS; COERCIVE FORCE; CRYSTAL STRUCTURE; DENSITY; DEPOSITS; MAGNETRONS; SPUTTERING; THIN FILMS; TUNGSTEN; X-RAY DIFFRACTION