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Title: Excellent low-field magnetoresistance effect in Ga-doped MnZn ferrites

An excellent low field magnetoresistance (LFMR) property was achieved from the Ga-doped (Mn{sub 0.8}Zn{sub 0.2})Fe{sub 2}O{sub 4} (MnZn) ferrites at room temperature (RT). For this study, undoped and Ga-doped MnZn ferrites with the nominal compositions of (Mn{sub 0.8}Zn{sub 0.2}){sub 1−x}Ga{sub x}Fe{sub 2}O{sub 4} (x = 0 ∼ 0.1) were prepared by the conventional solid state reaction at 1400°C for 2 h in air. From the magneto-transport measurements, Ga-doped MnZn ferrites were found to have not only much lower resistivity values but also greatly improved LFMR ratios in comparison with undoped sample. The highest maximum LFMR ratio of 2.5% at 290 K in 0.5 kOe was achievable from 2 mol% Ga-doped MnZn ferrite. This large LFMR effect is attributable to an increase in spin electrons by Ga{sup 3+} ion substitution for the (Mn, Zn){sup 2+} site.
Authors:
;  [1]
  1. Department of Materials Science and Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22420225
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPARATIVE EVALUATIONS; DOPED MATERIALS; ELECTRONS; FERRITE; FERRITES; GALLIUM IONS; MAGNETORESISTANCE; SOLIDS; SPIN