Interfacial Nb-substitution induced anomalous enhancement of polarization and conductivity in BaTiO{sub 3} ferroelectric tunnel junctions

Journal Article · Mon Dec 15 00:00:00 EST 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4905059· OSTI ID:22420222

Li, H. F.; Zheng, Yue; Chen, W. J.; Zhang, G. H. ^[1]; Wang, Biao ^[1]

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1. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 510275, Guangzhou (China)

Using density functional theory (DFT) method combined with non-equilibrium Green’s function approach, we systematically investigated the structural, ferroelectric and electronic transport properties of Pt/BaTiO{sub 3}/Pt ferroelectric tunnel junctions (FTJ) with the interface atomic layers doped by charge neutral Nb{sub Ti} substitution. It is found that interfacial Nb{sub Ti} substitution will produce several anomalous effects such as the vanishing of ferroelectric critical thickness and the decrease of junction resistance against tunneling current. Consequently, the thickness of the ferroelectric thin film (FTF) in the FTJ can be reduced, and both the electroresistance effect and sensitivity to external bias of the FTJ are enhanced. Our calculations indicate that the enhancements of conductivity and ferroelectric distortion can coexist in FTJs, which should be important for applications of functional electronic devices based on FTJs.

• OSTI ID: 22420222
• Journal Information: AIP Advances, Vol. 4, Issue 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DENSITY FUNCTIONAL METHOD
DOPED MATERIALS
ELECTRONIC EQUIPMENT
FERROELECTRIC MATERIALS
INTERFACES
POLARIZATION
SENSITIVITY
THICKNESS
THIN FILMS
TITANATES
TUNNEL EFFECT