skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi{sub 2}Se{sub 3} thin films

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4904900· OSTI ID:22420214
; ; ; ;  [1];  [2]; ; ;  [3];  [4]
  1. Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU (United Kingdom)
  2. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
  3. IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)
  4. Magnetic Spectroscopy Group, Diamond Light Source, Didcot, OX11 0DE (United Kingdom)

We report the growth of Mn-doped Bi{sub 2}Se{sub 3} thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μ{sub B}/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μ{sub B}/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L{sub 2,3} edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

OSTI ID:
22420214
Journal Information:
AIP Advances, Vol. 4, Issue 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
Country of Publication:
United States
Language:
English