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Title: Oscillation of electron mobility in parabolic double quantum well structure due to applied electric field

We show that oscillation of low temperature electron mobility μ can be obtained by applying an electric field F along the growth direction of the asymmetrically barrier delta doped Al{sub x}Ga{sub 1-x}As parabolic double quantum well structure. The drastic changes in the subband Fermi energies and distributions of subband wave functions as a function of F yield nonmonotonic intra- and intersubband scattering rate matrix elements mediated by intersubband effects. The oscillatory enhancement of μ, which is attributed to the subband mobilities governed by the ionized impurity scattering, magnifies with increase in well width and decrease in height of the parabolic structure potential. The results can be utilized for nanoscale low temperature device applications.
Authors:
 [1] ;  [2]
  1. Department of Electronic Science, Berhampur University, Berhampur-760 007, Odisha (India)
  2. Department of Electronics and Communication Engineering, National Institute of Science and Technology, Palur Hills, Berhampur-761 008, Odisha (India)
Publication Date:
OSTI Identifier:
22420193
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRIC FIELDS; ELECTRON MOBILITY; MATRIX ELEMENTS; OSCILLATIONS; QUANTUM WELLS; SCATTERING