Fabrication of 5-20 nm thick β-W films

Journal Article · Sat Nov 15 00:00:00 EST 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4903165· OSTI ID:22420173

Narasimham, Avyaya J.; Medikonda, Manasa; Matsubayashi, Akitomo; Khare, Prasanna; Chong, Hyuncher; Matyi, Richard J.; Diebold, Alain

A technique to fabricate 5 to 20 nm thick sputter deposited β W films on SiO{sub 2} and Si substrates is presented. This is achieved by growing tungsten on a 5 nm SiO{sub 2} layer or in an oxygen controlled environment by flowing 2 sccm of O{sub 2} during deposition. Resistivity, X-ray photoelectron spectroscopy, X-ray diffraction and reflectivity studies were performed to determine the phase and thickness of tungsten films. These results demonstrate a technique to grow this film on bare Si or a SiO{sub 2} substrate, which can enable growth on the bottom of a write unit in a non-volatile spin logic device.

• OSTI ID: 22420173
• Journal Information: AIP Advances, Vol. 4, Issue 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
DEPOSITS
FABRICATION
FILMS
OXYGEN
REFLECTIVITY
SILICA
SILICON OXIDES
SPUTTERING
SUBSTRATES
THICKNESS
TUNGSTEN
VOLATILITY
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY