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Title: Fabrication of 5-20 nm thick β-W films

A technique to fabricate 5 to 20 nm thick sputter deposited β W films on SiO{sub 2} and Si substrates is presented. This is achieved by growing tungsten on a 5 nm SiO{sub 2} layer or in an oxygen controlled environment by flowing 2 sccm of O{sub 2} during deposition. Resistivity, X-ray photoelectron spectroscopy, X-ray diffraction and reflectivity studies were performed to determine the phase and thickness of tungsten films. These results demonstrate a technique to grow this film on bare Si or a SiO{sub 2} substrate, which can enable growth on the bottom of a write unit in a non-volatile spin logic device.
Authors:
; ; ; ; ; ; ;  [1]
  1. College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York 12203 (United States)
Publication Date:
OSTI Identifier:
22420173
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; DEPOSITS; FABRICATION; FILMS; OXYGEN; REFLECTIVITY; SILICA; SILICON OXIDES; SPUTTERING; SUBSTRATES; THICKNESS; TUNGSTEN; VOLATILITY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY