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Title: Photoluminescence studies of individual and few GaSb/GaAs quantum rings

We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ╬╝eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.
Authors:
; ; ; ; ; ; ;  [1] ; ;  [2]
  1. Department of Physics, Lancaster University, LA1 4YB (United Kingdom)
  2. Department of Applied Physics, Eindhoven University of Technology (Netherlands)
Publication Date:
OSTI Identifier:
22420166
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; EXCITATION; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; NANOSTRUCTURES; PHOTOLUMINESCENCE; RESOLUTION; SPECTRA