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Title: In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.
Authors:
;  [1] ;  [2] ; ;  [1] ;  [3]
  1. CIC nanoGUNE, Tolosa Hiribidea 76, 20018 Donostia, San Sebastian, Basque Country (Spain)
  2. I.N.T.I. – CONICET and ECyT-UNSAM, San Martín, Bs As (Argentina)
  3. (Spain)
Publication Date:
OSTI Identifier:
22420165
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE TRANSPORT; CRYOSTATS; ELECTRODES; ELECTRONS; ELECTROPHORESIS; FABRICATION; HELIUM; LIQUIDS; NANOWIRES; NICKEL ALLOYS; PALLADIUM; QUANTUM DOTS; TRANSISTORS