In situ electrical characterization of palladium-based single electron transistors made by electromigration technique
- CIC nanoGUNE, Tolosa Hiribidea 76, 20018 Donostia, San Sebastian, Basque Country (Spain)
- I.N.T.I. – CONICET and ECyT-UNSAM, San Martín, Bs As (Argentina)
We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber.
- OSTI ID:
- 22420165
- Journal Information:
- AIP Advances, Vol. 4, Issue 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
Similar Records
Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors
A Water-Based Silver-Nanowire Screen-Print Ink for the Fabrication of Stretchable Conductors and Wearable Thin-Film Transistors