The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices
Abstract
The memory structures Pt/Al{sub 2}O{sub 3}/(TiO{sub 2}){sub x}(Al{sub 2}O{sub 3}){sub 1−x}/Al{sub 2}O{sub 3}/p-Si(nominal composition x = 0.05, 0.50 and 0.70) were fabricated by using rf-magnetron sputtering and atomic layer deposition techniques, in which the dielectric constant and the bottom of the conduction band of the high-k composite (TiO{sub 2}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} were adjusted by controlling the partial composition of Al{sub 2}O{sub 3}. With the largest dielectric constant and the lowest deviation from the bottom of the conduction band of Si, (TiO{sub 2}){sub 0.7}(Al{sub 2}O{sub 3}){sub 0.3} memory devices show the largest memory window of 7.54 V, the fast programming/erasing speed and excellent endurance and retention characteristics, which were ascribed to the special structural design, proper combination of dielectric constant and band alignment in the high-k composite (TiO{sub 2}){sub 0.7}(Al{sub 2}O{sub 3}){sub 0.3}.
- Authors:
-
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China)
- Publication Date:
- OSTI Identifier:
- 22420155
- Resource Type:
- Journal Article
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ALUMINIUM OXIDES; MEMORY DEVICES; PERMITTIVITY; SPUTTERING; TITANIUM OXIDES
Citation Formats
Lu, Jianxin, Gong, Changjie, Ou, Xin, Lu, Wei, Yin, Jiang, Xu, Bo, Xia, Yidong, Liu, Zhiguo, and Li, Aidong. The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices. United States: N. p., 2014.
Web. doi:10.1063/1.4901914.
Lu, Jianxin, Gong, Changjie, Ou, Xin, Lu, Wei, Yin, Jiang, Xu, Bo, Xia, Yidong, Liu, Zhiguo, & Li, Aidong. The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices. United States. https://doi.org/10.1063/1.4901914
Lu, Jianxin, Gong, Changjie, Ou, Xin, Lu, Wei, Yin, Jiang, Xu, Bo, Xia, Yidong, Liu, Zhiguo, and Li, Aidong. 2014.
"The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices". United States. https://doi.org/10.1063/1.4901914.
@article{osti_22420155,
title = {The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices},
author = {Lu, Jianxin and Gong, Changjie and Ou, Xin and Lu, Wei and Yin, Jiang and Xu, Bo and Xia, Yidong and Liu, Zhiguo and Li, Aidong},
abstractNote = {The memory structures Pt/Al{sub 2}O{sub 3}/(TiO{sub 2}){sub x}(Al{sub 2}O{sub 3}){sub 1−x}/Al{sub 2}O{sub 3}/p-Si(nominal composition x = 0.05, 0.50 and 0.70) were fabricated by using rf-magnetron sputtering and atomic layer deposition techniques, in which the dielectric constant and the bottom of the conduction band of the high-k composite (TiO{sub 2}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} were adjusted by controlling the partial composition of Al{sub 2}O{sub 3}. With the largest dielectric constant and the lowest deviation from the bottom of the conduction band of Si, (TiO{sub 2}){sub 0.7}(Al{sub 2}O{sub 3}){sub 0.3} memory devices show the largest memory window of 7.54 V, the fast programming/erasing speed and excellent endurance and retention characteristics, which were ascribed to the special structural design, proper combination of dielectric constant and band alignment in the high-k composite (TiO{sub 2}){sub 0.7}(Al{sub 2}O{sub 3}){sub 0.3}.},
doi = {10.1063/1.4901914},
url = {https://www.osti.gov/biblio/22420155},
journal = {AIP Advances},
issn = {2158-3226},
number = 11,
volume = 4,
place = {United States},
year = {Sat Nov 15 00:00:00 EST 2014},
month = {Sat Nov 15 00:00:00 EST 2014}
}