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Title: The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices

The memory structures Pt/Al{sub 2}O{sub 3}/(TiO{sub 2}){sub x}(Al{sub 2}O{sub 3}){sub 1−x}/Al{sub 2}O{sub 3}/p-Si(nominal composition x = 0.05, 0.50 and 0.70) were fabricated by using rf-magnetron sputtering and atomic layer deposition techniques, in which the dielectric constant and the bottom of the conduction band of the high-k composite (TiO{sub 2}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} were adjusted by controlling the partial composition of Al{sub 2}O{sub 3}. With the largest dielectric constant and the lowest deviation from the bottom of the conduction band of Si, (TiO{sub 2}){sub 0.7}(Al{sub 2}O{sub 3}){sub 0.3} memory devices show the largest memory window of 7.54 V, the fast programming/erasing speed and excellent endurance and retention characteristics, which were ascribed to the special structural design, proper combination of dielectric constant and band alignment in the high-k composite (TiO{sub 2}){sub 0.7}(Al{sub 2}O{sub 3}){sub 0.3}.
Authors:
;  [1] ; ; ; ; ; ; ;  [2]
  1. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)
  2. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China)
Publication Date:
OSTI Identifier:
22420155
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; MEMORY DEVICES; PERMITTIVITY; SPUTTERING; TITANIUM OXIDES