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Title: Laboratory detections of SiC{sub 2}N and SiC{sub 3}N by Fourier transform microwave spectroscopy

Two silicon-bearing carbon chain radicals, SiC{sub 2}N and SiC{sub 3}N, were detected in the laboratory by Fourier transform microwave spectroscopy. Molecular constants including the hyperfine coupling constants have been determined for the two radicals in the ground electronic states. The SiC{sub 2}N and SiC{sub 3}N radicals have linear structures in the {sup 2}Π ground electronic states with inverted and regular fine structures, respectively, as are the cases for their isoelectronic radicals, SiC{sub 3}H and SiC{sub 4}H, indicating that the SiC{sub n}N radicals have similar electronic structures to the SiC{sub n+1}H radicals. The electronic structures of SiC{sub 2}N and SiC{sub 3}N in the ground states are discussed on the basis of the experimentally determined molecular constants.
Authors:
; ;  [1]
  1. Department of Basic Science, Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8902 (Japan)
Publication Date:
OSTI Identifier:
22415349
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Chemical Physics; Journal Volume: 141; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; CARBON; COUPLING CONSTANTS; DETECTION; ELECTRONIC STRUCTURE; FINE STRUCTURE; FOURIER TRANSFORMATION; GROUND STATES; RADICALS; SILICON; SILICON CARBIDES; SPECTROSCOPY