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Title: Magneto-transport study of top- and back-gated LaAlO{sub 3}/SrTiO{sub 3} heterostructures

We report a detailed analysis of magneto-transport properties of top- and back-gated LaAlO{sub 3}/SrTiO{sub 3} heterostructures. Efficient modulation in magneto-resistance, carrier density, and mobility of the two-dimensional electron liquid present at the interface is achieved by sweeping top and back gate voltages. Analyzing those changes with respect to the carrier density tuning, we observe that the back gate strongly modifies the electron mobility while the top gate mainly varies the carrier density. The evolution of the spin-orbit interaction is also followed as a function of top and back gating.
Authors:
; ; ; ; ; ;  [1]
  1. Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva (Switzerland)
Publication Date:
OSTI Identifier:
22415303
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 3; Journal Issue: 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINATES; CARRIER DENSITY; CARRIER MOBILITY; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRONS; HETEROJUNCTIONS; INTERFACES; LANTHANUM COMPOUNDS; L-S COUPLING; MAGNETORESISTANCE; MODULATION; STRONTIUM TITANATES; TWO-DIMENSIONAL SYSTEMS