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Title: Structure and transport in high pressure oxygen sputter-deposited BaSnO{sub 3−δ}

BaSnO{sub 3} has recently been identified as a high mobility wide gap semiconductor with significant potential for room temperature oxide electronics. Here, a detailed study of the high pressure oxygen sputter-deposition, microstructure, morphology, and stoichiometry of epitaxial BaSnO{sub 3} on SrTiO{sub 3}(001) and MgO(001) is reported, optimized conditions resulting in single-phase, relaxed, close to stoichiometric films. Most significantly, vacuum annealing is established as a facile route to n-doped BaSnO{sub 3−δ}, leading to electron densities above 10{sup 19} cm{sup −3}, 5 mΩ cm resistivities, and room temperature mobility of 20 cm{sup 2} V{sup −1} s{sup −1} in 300-Å-thick films on MgO(001). Mobility limiting factors, and the substantial scope for their improvement, are discussed.
Authors:
; ; ; ; ; ;  [1]
  1. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States)
Publication Date:
OSTI Identifier:
22415297
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 3; Journal Issue: 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; BARIUM COMPOUNDS; DEPOSITION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON DENSITY; ENERGY GAP; EPITAXY; FILMS; MAGNESIUM OXIDES; MICROSTRUCTURE; PRESSURE DEPENDENCE; SEMICONDUCTOR MATERIALS; SPUTTERING; STANNATES; STRONTIUM TITANATES