Enhanced electrical and magnetic properties in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films deposited on CaTiO{sub 3}-buffered silicon substrates

Journal Article · Mon Jun 01 00:00:00 EDT 2015 · APL materials

DOI:https://doi.org/10.1063/1.4915486· OSTI ID:22415295

Adamo, C. ^[1]; Méchin, L.; Guillet, B.; Wu, S.; Routoure, J. -M. ^[2]; Heeg, T. ^[1]; Katz, M.; Pan, X. Q. ^[3]; Mercone, S. ^[4]; Schubert, J.; Zander, W. ^[5]; Misra, R. ^[6]; Schiffer, P. ^[6]; others, and

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1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States)
2. Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen, (GREYC-UMR 6072), CNRS-ENSICAEN—Université de Caen Basse-Normandie, 6 Boulevard Maréchal Juin, 14050 Caen Cedex (France)
3. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
4. Laboratoire de Sciences des Procédés et des Matériaux, UPR3407, CNRS, Institut Galilee, Universite Paris-Nord, Villetaneuse (France)
5. Peter Grünberg Institute (PGI9-IT), JARA-Fundamentals of Future Information Technology, Research Centre Jülich, Jülich D-52425 (Germany)
6. Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

We investigate the suitability of an epitaxial CaTiO{sub 3} buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La{sub 0.7}Sr{sub 0.3}MnO{sub 3} with silicon. The magnetic and electrical properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films deposited by MBE on CaTiO{sub 3}-buffered silicon (CaTiO{sub 3}/Si) are compared with those deposited on SrTiO{sub 3}-buffered silicon (SrTiO{sub 3}/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO{sub 3} buffer layer. These results are relevant to device applications of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films on silicon substrates.

• OSTI ID: 22415295
• Journal Information: APL materials, Vol. 3, Issue 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CALCIUM COMPOUNDS
COMPARATIVE EVALUATIONS
CRYSTAL STRUCTURE
CURIE POINT
HETEROJUNCTIONS
LANTHANUM COMPOUNDS
LAYERS
MAGNETIC PROPERTIES
MAGNETORESISTANCE
MANGANATES
MOLECULAR BEAM EPITAXY
SILICON
STRONTIUM TITANATES
SUBSTRATES
THIN FILMS