skip to main content

Title: Perspective: Oxide molecular-beam epitaxy rocks!

Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.
Authors:
 [1]
  1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)
Publication Date:
OSTI Identifier:
22415292
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 3; Journal Issue: 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER MOBILITY; GOLD; HETEROJUNCTIONS; LAYERS; MOLECULAR BEAM EPITAXY; OXIDES; POTENTIALS; SEMICONDUCTOR MATERIALS; SYNTHESIS