Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

Journal Article · Mon Jun 01 00:00:00 EDT 2015 · APL materials

DOI:https://doi.org/10.1063/1.4917283· OSTI ID:22415290

Wu, J.; Božović, I. ^[1]

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1. Brookhaven National Laboratory, Upton, New York 11973-5000 (United States)

Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.

• OSTI ID: 22415290
• Journal Information: APL materials, Vol. 3, Issue 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CONCENTRATION RATIO
DIELECTRIC MATERIALS
GROUND STATES
INTERFACES
MOLECULAR BEAM EPITAXY
OXIDES
PHASE TRANSFORMATIONS
SUPERCONDUCTIVITY
SUPERCONDUCTORS