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Title: Perspective: Extremely fine tuning of doping enabled by combinatorial molecular-beam epitaxy

Chemical doping provides an effective method to control the electric properties of complex oxides. However, the state-of-art accuracy in controlling doping is limited to about 1%. This hampers elucidation of the precise doping dependences of physical properties and phenomena of interest, such as quantum phase transitions. Using the combinatorial molecular beam epitaxy, we improve the accuracy in tuning the doping level by two orders of magnitude. We illustrate this novel method by two examples: a systematic investigation of the doping dependence of interface superconductivity, and a study of the competing ground states in the vicinity of the insulator-to-superconductor transition.
Authors:
;  [1]
  1. Brookhaven National Laboratory, Upton, New York 11973-5000 (United States)
Publication Date:
OSTI Identifier:
22415290
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 3; Journal Issue: 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CONCENTRATION RATIO; DIELECTRIC MATERIALS; GROUND STATES; INTERFACES; MOLECULAR BEAM EPITAXY; OXIDES; PHASE TRANSFORMATIONS; SUPERCONDUCTIVITY; SUPERCONDUCTORS