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Title: Engineering ferroelectric tunnel junctions through potential profile shaping

We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO{sub 3}. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2]
  1. Unité Mixte de Physique CNRS/Thales, 1 Av. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France)
  2. Thales Research and Technology, 1 Av. Fresnel, 91767 Palaiseau (France)
Publication Date:
OSTI Identifier:
22415287
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 3; Journal Issue: 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH COMPOUNDS; COBALT; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRONIC STRUCTURE; FERRITES; FERROELECTRIC MATERIALS; IRIDIUM; NICKEL; TEMPERATURE RANGE 0273-0400 K; TUNGSTEN; TUNNEL EFFECT; WORK FUNCTIONS