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Title: Research Update: Point defects in CdTe{sub x}Se{sub 1−x} crystals grown from a Te-rich solution for applications in detecting radiation

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Current Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from 1 to 30 V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.
Authors:
; ; ; ; ; ; ;  [1] ;  [2] ; ;  [3]
  1. Brookhaven National Laboratory, Upton, New York 11973 (United States)
  2. Korea University, Seoul 136-701 (Korea, Republic of)
  3. Fisk University, Nashville, Tennessee 37208 (United States)
Publication Date:
OSTI Identifier:
22415264
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 3; Journal Issue: 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM SELENIDES; CADMIUM TELLURIDES; CAPTURE; CONCENTRATION RATIO; CROSS SECTIONS; CRYSTAL GROWTH; CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EV RANGE; TRAPS; VACANCIES