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Title: Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.
Authors:
;  [1] ;  [2] ;  [3] ; ;  [4] ;  [4] ;  [5]
  1. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)
  2. LMGP, University Grenoble-Alpes, CNRS, F-3800 Grenoble (France)
  3. Kodak Research Laboratories, Eastman Kodak Company, Rochester, New York 14650 (United States)
  4. Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands)
  5. (Netherlands)
Publication Date:
OSTI Identifier:
22415263
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 3; Journal Issue: 4; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATMOSPHERIC PRESSURE; DEPOSITION; DOPED MATERIALS; LIGHT EMITTING DIODES; ORGANOMETALLIC COMPOUNDS; PEROVSKITE; SOLAR CELLS; THIN FILMS; TRANSISTORS; ZINC OXIDES