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Title: All-perovskite transparent high mobility field effect using epitaxial BaSnO{sub 3} and LaInO{sub 3}

We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO{sub 3} and LaInO{sub 3}. We have developed epitaxial LaInO{sub 3} as the gate oxide on top of BaSnO{sub 3}, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO{sub 3} films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO{sub 3} as a gate dielectric and the La-doped BaSnO{sub 3} as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm{sup 2} V{sup −1} s{sup −1}, the on/off ratio was larger than 10{sup 7}, and the subthreshold swing was 0.65 V dec{sup −1}. We discuss the possible origins for such device performance and the future directions for further improvement.
Authors:
; ; ; ; ;  [1] ; ;  [2] ; ;  [3]
  1. Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
  2. Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)
  3. Center for Theoretical Physics, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22415256
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 3; Journal Issue: 3; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BARIUM COMPOUNDS; DIELECTRIC MATERIALS; DOPED MATERIALS; ELECTRON MOBILITY; EPITAXY; FIELD EFFECT TRANSISTORS; FILMS; HETEROJUNCTIONS; INDIUM OXIDES; LANTHANUM COMPOUNDS; LAYERS; PERMITTIVITY; PEROVSKITE; PHASE STABILITY; STANNATES