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Title: Selective growth of single phase VO{sub 2}(A, B, and M) polymorph thin films

We demonstrate the growth of high quality single phase films of VO{sub 2}(A, B, and M) on SrTiO{sub 3} substrate by controlling the vanadium arrival rate (laser frequency) and oxidation of the V atoms. A phase diagram has been developed (oxygen pressure versus laser frequency) for various phases of VO{sub 2} and their electronic properties are investigated. VO{sub 2}(A) phase is insulating VO{sub 2}(B) phase is semi-metallic, and VO{sub 2}(M) phase exhibits a metal-insulator transition, corroborated by photo-electron spectroscopic studies. The ability to control the growth of various polymorphs opens up the possibility for novel (hetero)structures promising new device functionalities.
Authors:
;  [1] ;  [2] ;  [3] ;  [2] ;  [4] ; ; ; ;  [3] ;  [5] ;  [6] ;  [4] ;  [7] ;  [1] ;  [2] ;  [2]
  1. Department of Physics, National University of Singapore, Singapore 117542 (Singapore)
  2. (Singapore)
  3. NUSNNI-NanoCore, National University of Singapore, Singapore 117576 (Singapore)
  4. Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012 (India)
  5. Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore)
  6. Electron Optics Division, JEOL Ltd., Tokyo 196-8558 (Japan)
  7. (CSIR-NISE), New Delhi 110001 (India)
Publication Date:
OSTI Identifier:
22415250
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 3; Journal Issue: 2; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; ELECTRONS; OXIDATION; OXYGEN; PHASE DIAGRAMS; PHASE TRANSFORMATIONS; STRONTIUM TITANATES; SUBSTRATES; THIN FILMS; VANADIUM; VANADIUM OXIDES