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Title: Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Non-polar (11-20) InGaN quantum dots (QDs) were grown by metal organic vapour phase epitaxy. An InGaN epilayer was grown and subjected to a temperature ramp in a nitrogen and ammonia environment before the growth of the GaN capping layer. Uncapped structures with and without the temperature ramp were grown for reference and imaged by atomic force microscopy. Micro-photoluminescence studies reveal the presence of resolution limited peaks with a linewidth of less than ∼500 μeV at 4.2 K. This linewidth is significantly narrower than that of non-polar InGaN quantum dots grown by alternate methods and may be indicative of reduced spectral diffusion. Time resolved photoluminescence studies reveal a mono-exponential exciton decay with a lifetime of 533 ps at 2.70 eV. The excitonic lifetime is more than an order of magnitude shorter than that for previously studied polar quantum dots and suggests the suppression of the internal electric field. Cathodoluminescence studies show the spatial distribution of the quantum dots and resolution limited spectral peaks at 18 K.
Authors:
; ; ; ; ; ; ;  [1] ; ;  [2]
  1. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS (United Kingdom)
  2. Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom)
Publication Date:
OSTI Identifier:
22415232
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 2; Journal Issue: 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; AMMONIA; ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; DIFFUSION; ELECTRIC FIELDS; EV RANGE; GALLIUM NITRIDES; LAYERS; LIFETIME; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM DOTS; SPATIAL DISTRIBUTION; TIME RESOLUTION; VAPOR PHASE EPITAXY