Research Update: Spatially resolved mapping of electronic structure on atomic level by multivariate statistical analysis
- Oak Ridge National Laboratory, Institute for Functional Imaging of Materials, Center for Nanophase Material Science, Oak Ridge, Tennessee 37922 (United States)
- Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, Tennessee 37922 (United States)
Atomic level spatial variability of electronic structure in Fe-based superconductor FeTe{sub 0.55}Se{sub 0.45} (T{sub c} = 15 K) is explored using current-imaging tunneling-spectroscopy. Multivariate statistical analysis of the data differentiates regions of dissimilar electronic behavior that can be identified with the segregation of chalcogen atoms, as well as boundaries between terminations and near neighbor interactions. Subsequent clustering analysis allows identification of the spatial localization of these dissimilar regions. Similar statistical analysis of modeled calculated density of states of chemically inhomogeneous FeTe{sub 1−x}Se{sub x} structures further confirms that the two types of chalcogens, i.e., Te and Se, can be identified by their electronic signature and differentiated by their local chemical environment. This approach allows detailed chemical discrimination of the scanning tunneling microscopy data including separation of atomic identities, proximity, and local configuration effects and can be universally applicable to chemically and electronically inhomogeneous surfaces.
- OSTI ID:
- 22415225
- Journal Information:
- APL materials, Vol. 2, Issue 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
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