Electronic transitions in strained SmNiO{sub 3} thin films
- Department de Physique de la Matière Condensée, Université de Genève, Genève 1211 (Switzerland)
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen (Switzerland)
- Canadian Light Source, Saskatoon, Saskatchewan S7N 2V3 (Canada)
- Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z1 (Canada)
Nickelates are known for their metal to insulator transition (MIT) and an unusual magnetic ordering, occurring at T = T{sub Néel}. Here, we investigate thin films of SmNiO{sub 3} subjected to different levels of epitaxial strain. We find that the original bulk behavior (T{sub Néel} < T{sub MI}) is strongly affected by applying compressive strain to the films. For small compressive strains, a regime where T{sub Néel} = T{sub MI} is achieved, the paramagnetic insulating phase characteristic of the bulk compound is suppressed and the MIT becomes 1st order. Further increasing the in-plane compression of the SmNiO{sub 3} lattice leads to the stabilization of a single metallic paramagnetic phase.
- OSTI ID:
- 22415224
- Journal Information:
- APL materials, Vol. 2, Issue 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
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