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Title: A high density two-dimensional electron gas in an oxide heterostructure on Si (001)

We present the growth and characterization of layered heterostructures comprised of LaTiO{sub 3} and SrTiO{sub 3} epitaxially grown on Si (001). Magnetotransport measurements show that the sheet carrier densities of the heterostructures scale with the number of LaTiO{sub 3}/SrTiO{sub 3} interfaces, consistent with the presence of an interfacial 2-dimensional electron gas (2DEG) at each interface. Sheet carrier densities of 8.9 × 10{sup 14} cm{sup −2} per interface are observed. Integration of such high density oxide 2DEGs on silicon provides a bridge between the exceptional properties and functionalities of oxide 2DEGs and microelectronic technologies.
Authors:
; ; ; ;  [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [2]
  1. Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut 06511 (United States)
  2. (United States)
  3. Department of Physics, The University of Texas at Arlington, Arlington, Texas 76019 (United States)
Publication Date:
OSTI Identifier:
22415223
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL materials; Journal Volume: 2; Journal Issue: 11; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; CHARGE CARRIERS; CRYSTAL GROWTH; ELECTRON GAS; EPITAXY; HETEROJUNCTIONS; INTERFACES; LANTHANUM COMPOUNDS; OXIDES; SILICON; STRONTIUM TITANATES; TWO-DIMENSIONAL SYSTEMS